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ROHMs New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices : comparemela.com
ROHM's New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices
Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds on the order of
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