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Novel high entropy alloy nanoparticle catalysts for growing high-density carbon nanotubes

Novel high entropy alloy nanoparticle catalysts for growing high-density carbon nanotubes
phys.org - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from phys.org Daily Mail and Mail on Sunday newspapers.

Takahiro maruyamaTomoki omaeTakahiro maruyama meijo universityDepartment of applied chemistry at meijo universityMeijo universityProfessor takahiro maruyamaApplied chemistryApplied physicsApplied physics express

Novel time-resolved atomic force microscopy technique captures ultrafast light-induced phenomena

Novel time-resolved atomic force microscopy technique captures ultrafast light-induced phenomena
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Hiroyuki mogiApplied physics express

ROHM s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices – EEJournal

ROHM s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices – EEJournal
eejournal.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from eejournal.com Daily Mail and Mail on Sunday newspapers.

Chiao tung universityXinzhu xianSan diegoUnited statesLos angelesYue ming hsinSanta claraGaas mosfetsProfessor chin hsia chang gung universityCo ltdUniversity of illinois at urbana champaignDepartment of electrical engineeringOptical research at national central universityCoherent corpNational central universityUniversity of california

ROHM s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices

Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds on the order of

United statesSan diegoLos angelesChiao tung universityXinzhu xianSanta claraYue ming hsinTravis moenchGaas mosfetsUniversity of californiaElectrical engineering at national central universityNational central university taiwanProfessor chin hsia chang gung universityNational central universityUniversity of illinois at urbana champaignCo ltd

ROHM s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices -November 08, 2023 at 05:02 pm EST

Class-leading unit of nanoseconds gate drive contributes to greater energy savings and miniaturization in LiDAR applications and data centersSanta Clara, CA and Kyoto, Japan, Nov. 08, 2023 ROHM.

Chiao tung universityXinzhu xianUnited statesLos angelesSan diegoSanta claraGaas mosfetsYue ming hsinProfessor chin hsia chang gung universityDepartment of electrical engineeringOptical research at national central universityCo ltdAnadigics incNational central universityCoherent corpUniversity of california