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ROHM s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices – EEJournal

ROHM s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices – EEJournal
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Chiao tung universityXinzhu xianSan diegoUnited statesLos angelesYue ming hsinSanta claraGaas mosfetsProfessor chin hsia chang gung universityCo ltdUniversity of illinois at urbana champaignDepartment of electrical engineeringOptical research at national central universityCoherent corpNational central universityUniversity of california

ROHM s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices

Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds on the order of

United statesSan diegoLos angelesChiao tung universityXinzhu xianSanta claraYue ming hsinTravis moenchGaas mosfetsUniversity of californiaElectrical engineering at national central universityNational central university taiwanProfessor chin hsia chang gung universityNational central universityUniversity of illinois at urbana champaignCo ltd

ROHM s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices -November 08, 2023 at 05:02 pm EST

Class-leading unit of nanoseconds gate drive contributes to greater energy savings and miniaturization in LiDAR applications and data centersSanta Clara, CA and Kyoto, Japan, Nov. 08, 2023 ROHM.

Chiao tung universityXinzhu xianUnited statesLos angelesSan diegoSanta claraGaas mosfetsYue ming hsinProfessor chin hsia chang gung universityDepartment of electrical engineeringOptical research at national central universityCo ltdAnadigics incNational central universityCoherent corpUniversity of california

ROHM s New Ultra-High-Speed Gate Driver IC: Maximizing the

Class-leading unit of nanoseconds gate drive contributes to greater energy savings and miniaturization in LiDAR applications and data centers.

San diegoUnited statesChiao tung universityXinzhu xianLos angelesYue ming hsinGaas mosfetsSanta claraDepartment of electrical engineeringProfessor chin hsia chang gung universityOptical research at national central universityCo ltdUniversity of illinois at urbana champaignNational central university taiwanElectrical engineering at national central universityNational chiao tung university

ROHM s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices

Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, opt.

San diegoUnited statesChiao tung universityXinzhu xianLos angelesGaas mosfetsSanta claraYue ming hsinAnadigics incUniversity of illinois at urbana champaignUniversity of californiaCo ltdProfessor chin hsia chang gung universityElectrical engineering at national central universityDepartment of electrical engineeringNational central university taiwan