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Gate driver IC maximises performance of GaN devices

Latest News from the Electronics Industry - Electropages ....

Taiwan , Yue-ming-hsin , National-central-university , Professor-chin-hsia-chang-gung-university , Department-of-electrical-engineering , Electrical-engineering , Yu-chen-liu , National-taipei-university , Professor-chin-hsia , Chang-gung-university ,

ROHM's New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices – EEJournal

ROHM's New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices – EEJournal
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ROHM's New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices

Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds on the order of ....

Kyoto , Japan , Taiwan , California , United-states , San-diego , Los-angeles , Chiao-tung-university , Xinzhu-xian , Japanese , Santa-clara , Yue-ming-hsin

ROHM's New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices -November 08, 2023 at 05:02 pm EST

Class-leading unit of nanoseconds gate drive contributes to greater energy savings and miniaturization in LiDAR applications and data centersSanta Clara, CA and Kyoto, Japan, Nov. 08, 2023 ROHM. ....

Kyoto , Japan , Chiao-tung-university , Xinzhu-xian , Taiwan , California , United-states , Los-angeles , San-diego , Japanese , Santa-clara , Gaas-mosfets

ROHM's New Ultra-High-Speed Gate Driver IC: Maximizing the

Class-leading unit of nanoseconds gate drive contributes to greater energy savings and miniaturization in LiDAR applications and data centers. ....

San-diego , California , United-states , Taiwan , Japan , Chiao-tung-university , Xinzhu-xian , Kyoto , Los-angeles , Japanese , Yue-ming-hsin , Gaas-mosfets