What s Different About Next-Gen Transistors semiengineering.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from semiengineering.com Daily Mail and Mail on Sunday newspapers.
New Transistor Structures At 3nm/2nm
Gate-all-around FETs will replace finFETs, but the transition will be costly and difficult.
Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into production is going to be difficult and expensive.
Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-around field-effect transistors (GAA FETs) at the 3nm and 2nm nodes, starting either next year or in 2023. GAA FETs hold the promise of better performance, lower power, and lower leakage, and they will be required below 3nm, when finFETs run out of steam. But even though these newfangled transistors are considered an evolutionary step from finFETs, and they have been in R&D for years, any new transistor type or material is a huge undertaking for the chip industry. Chipmakers have been postpo