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The Future of the Transistor
Planar to FinFET to Nanosheet to Complementary FET to 2D
San francisco
United states
Stanford university
Rohde schwarz
Si hfla
Cardea bio
William shockley
Walter brattain
V graphene mach zedhner
Shan kutagulla anand chamarthy
Kostya novoselov
John bardeen
Nicolas loubet
D channel technology
University of manchester andre geim
International electron devices meeting
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