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WPI-MANA erreicht direktes Wachstum von Germanen und markiert damit einen wichtigen Schritt für die Herstellung elektronischer Bauteile

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TSUKUBA, Japan, 21. Juli 2021 /PRNewswire/ Einem Team am WPI-MANA ist das direkte Wachstum von h-BN-verkapptem Germanen auf der Oberfläche von Silber Ag(111) gelungen. Sie glauben, dass dies eine vielversprechende Technik für die Herstellung von elektronischen Geräten auf Germanenbasis in der Zukunft sein könnte.
Die WPI-MANA-Gruppe wuchs das Germanen an den Grenzflächen von Graphen/Ag(111) und hexagonalem Bornitrid (h-BN)/Ag(111) durch Abspaltung von Germaniumatomen. Ein einfacher Glühprozess in Stickstoff (N2) oder Wasserstoff/Argon (H/Ar) bei Umgebungsdruck führte zur Bildung von Germanen, was darauf hindeutet, dass bei diesem Prozess keine Ultrahochvakuumbedingungen notwendig sind. Das resultierende Germanen war an der Luft stabil und gleichmäßig über die gesamte Fläche mit einem van der Waals (vdW)-Material bedeckt. ....

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