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Process and Control Today | Innoscience to discuss innovations in GaN at leading US power electronics event Applied Power Electronics Conference

Process and Control Today | Innoscience to discuss innovations in GaN at leading US power electronics event Applied Power Electronics Conference
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Innoscience to discuss innovations in GaN at leading US power electronics event Applied Power Electronics Conference (APEC)

March 01, 2022 – Innoscience Technology, a company founded to create a global energy ecosystem based on high performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, will take part in the Applied Power Electronics Conference (APEC) event held in Houston, Texas on March 20-24, 2022. Dr Denis Marcon, General Manager, Innoscience Europe, was chosen to be among the speakers at…

Bi-directional GaN HEMT with low RDS(on) for smart mobile devices and chargers

Latest News from the Electronics Industry - Electropages

GaN-on-Si HEMT for mobile devices

Innoscience Technology, which was founded to pursue high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power ICs, has come up with a 4

Innoscience delivers 40V bi-directional GaN HEMT with low RDS(on) for smart mobile devices, chargers and adapters

February 17 2022 - Innoscience Technology, a company founded to create a global energy ecosystem based on high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power solutions, today announced the INN40W08, a 40V bi-directional GaN-on-Si enhancement mode high-electron-mobility-transistor (HEMT) for mobile devices, including laptops and cellular phones. The INN40W08 HEMT has been developed using the company's advanced…

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