Breakthrough result could pave way for GaN to enter into the SiC high voltage domain Imec, the research and innovation hub, and AIXTRON, a provider of deposition equipment, have demonstrated epitaxial growth of gallium-nitride (GaN) buffer layers qualified for 1200V applications on 200mm QST substrates, with a hard breakdown exceeding 1800V.
The news that it is now possible to manufacture 1200V-qualified buffer layers opens doors to higher voltage GaN-based power applications such as electric cars, previously only feasible using silicon-carbide (SiC)-based technology. The result comes after the successful qualification of AIXTRONâs G5+ C fully automated metal-organic chemical vapor deposition (MOCVD) reactor at imec s facility in Leuven, Belgium, for integrating the optimised material epi-stack.