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PCIM 2024: Innoscience to show that GaN devices are price-comparative with silicon, very reliable and available as discrete (InnoGaN™), integrated (SolidGaN™) and bi-directional (V-GaN™)

PCIM 2024: Innoscience to show that GaN devices are price-comparative with silicon, very reliable and available as discrete (InnoGaN™), integrated (SolidGaN™) and bi-directional (V-GaN™)
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Denis marconYole groupInnoscience technologyJune dr denis marconGeneral manager europeTech stageMore efficientHall gan

Process and Control Today | Innoscience to discuss datacenter applications and present new products and integrated GaN ICs at APEC 2024

Process and Control Today | Innoscience to discuss datacenter applications and present new products and integrated GaN ICs at APEC 2024
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Yi sunInnoscience europeInnoscience americaOhm innogaDenis marconPengju kongPower electronics conferenceInnoscience technologyArtificial intelligenceOhm innoganGeneral manager innoscience europeGeneral manager innoscience americaTuesday febHigh frequencyBuck converterMobile phone

Process and Control Today | Innoscience introduces new 100V bi-directional GaN IC for 48V/60V Battery Management System (BMS) applications

Process and Control Today | Innoscience introduces new 100V bi-directional GaN IC for 48V/60V Battery Management System (BMS) applications
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Denis marconInnoscience europeSi mosfetsInnoscience technologyBattery management systemGeneral manager

Innoscience introduces new 100V bi-directional GaN IC for 48V/60V Battery Management System (BMS) applications

12th February 2024 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has launched a new 100V bi-directional member of the company’s VGaN IC family. The first family of VGaN devices rated 40V with wide on-resistance range (1.2mOhm – 12mOhm) have been successfully deployed in the USB OVP…

Si mosfetsDenis marconInnoscience europeInnoscience technologyGeneral manager

Innoscience launches low voltage HEMT family in easy-to-use flip chip QFN packaging – CIE

Innoscience launches low voltage HEMT family in easy-to-use flip chip QFN packaging – CIE
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Denis marconInnoscience europeInnoscience technology