Phase-change memory (PCM) has been considered a promising candidate for solving von Neumann bottlenecks owing to its low latency, non-volatile memory property and high integration density1,2. However, PCMs usually require a large current for the reset process by melting the phase-change material into an amorphous phase, which deteriorates the energy efficiency2–5. Various studies have been conducted to reduce the operation current by minimizing the device dimensions, but this increases the fabrication cost while the reduction of the reset current is limited6,7. Here we show a device for reducing the reset current of a PCM by forming a phase-changeable SiTex nano-filament. Without sacrificing the fabrication cost, the developed nano-filament PCM achieves an ultra-low reset current (approximately 10 μA), which is about one to two orders of magnitude smaller than that of highly scaled conventional PCMs. The device maintains favourable memory characteristics such
Pure titanium is a great choice for parts that are submitted to little external loading, as it is relatively inexpensive and easily formed. Measuring its strength can be done through microscopic measurement of the stress-strain relation.
John M Maloney - Research Interest: Thin Film Patterns maloney.org - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from maloney.org Daily Mail and Mail on Sunday newspapers.
Nanostructure of the Anodic and Nanomaterials Nanoparticles in Polyelectrolyte Multilayer-by-Layer (LbL) Films pfonline.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from pfonline.com Daily Mail and Mail on Sunday newspapers.
In a study published in Physical Review Materials, the combination of radiofrequency (RF) magnetron sputtering and an RF sulfur plasma source was used to fabricate n-type SnS thin films.