Twisted graphene is an intriguing contender for applications in next-generation energy conversion and storage devices due to its intrinsic physical qualities and the high degree of tunability of its electronic properties.
Zinc oxide or ZnO group semiconductors, which are comprised of ZnO and several ternary or even quaternary semiconductors created by adding appropriate additional elements to zinc and oxygen, are potentially suitable for UV-emitting solid-state technologies.
The development of indium oxide (In2O3) hollow porous nanospheres (HPNSs) embedded with silver nanoparticles as a gas sensor for the detection of TEA gas is the focus of a recent study.
Researchers from the Jawaharlal Nehru Centre for Advanced Scientific Research in India have reported the use of twisted multilayer graphene (tMLG) to develop an ultrafast supercapacitor. The findings of their study are currently in the pre-proof stage in the journal Materials Research Bulletin.
Researchers demonstrate a new method to synthesize robust free-standing titanium dioxide nanotube layers (FSL-TiO2NTs) with excellent photoelectronic properties and complete structures.