WPI-MANA Demonstrates New GaN MEMS Resonator Is Temperature-stable up to 600 K prnewswire.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from prnewswire.com Daily Mail and Mail on Sunday newspapers.
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IMAGE: The device processing for the double-clamped GaN bridge resonator on Si substrate:
(1) The as-grown GaN epitaxial film on Si substrate. Except for the AlN buffer layer, no strain removal layer is. view more
Credit: Liwen Sang
Liwen Sang, independent scientist at International Center for Materials Nanoarchitectonics, National Institute for Materials Science (also JST PRESTO researcher) developed a MEMS resonator that stably operates even under high temperatures by regulating the strain caused by the heat from gallium nitride (GaN).
High-precision synchronization is required for the fifth generation mobile communication system (5G) with a high speed and large capacity. To that end, a high-performance frequency reference oscillator which can balance the temporal stability and temporal resolution is necessary as a timing device to generate signals on a fixed cycle. The conventional quartz resonator as the oscillator has the poor integration capability an