Indian researchers have developed a high-performance, industry-standard model transistor that can be used to make high-power radio frequency circuits, which include amplifiers and switches that are used in wireless transmission and are useful .
New Delhi, Dec 30 (IANS) Indian researchers have developed a high-performance, industry-standard model transistor that can be used to make high-power radio
Indian researchers have developed a high performance industry-standard model for Aluminium gallium nitride (AlGaN/GaN) High Electron Mobility Transistors (HEMTs) with simple design procedures which can be used to make high-power Radio Frequency (RF)
Indian researchers have developed a high-performance industry-standard model for Aluminium gallium nitride (AlGaN/GaN) High Electron Mobility Transistors (HEMTs) with simple design procedures which can be used to make high-power Radio Frequency (RF) circuits owing to its high breakdown voltage, informed the Ministry of Science and Technology on Thursday.
Indian researchers have developed a high-performance, industry-standard model transistor that can be used to make high-power radio frequency circuits, which include amplifiers and switches that are used in wireless transmission and are useful for space and defence applications.