Indian researchers have developed a high performance industry-standard model for Aluminium gallium nitride (AlGaN/GaN) High Electron Mobility Transistors (HEMTs) with simple design procedures which can be used to make high-power Radio Frequency (RF)
Understanding how the optical and electrical properties of nanostructures are influenced by different environmental conditions can aid the development of effective technologies in a range of applications. This paper focuses on the effect of controlled conditions on GaN nanostructures.
Laser-Driven Semiconductor Switch Pushes Speed Capabilities of Next-Generation Communications | Research & Technology | Jun 2021 photonics.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from photonics.com Daily Mail and Mail on Sunday newspapers.