This article explores the significant advancements in transistor technology through the integration of silicon-doped hafnium oxide, highlighting its role in improving energy efficiency and performance in modern computing devices.
ITRI is working with Taiwan Semiconductor Manufacturing Company (TSMC) on the development of a spin-orbit-torque magnetic random-access memory (SOT-MRAM) array chip.
The semiconductor industry is on the brink of a significant advancement with the latest collaboration between the Industrial Technology Research Institute
ITRI and TSMC Collaborate on Advancing High-Speed Computing with SOT-MRAM streetinsider.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from streetinsider.com Daily Mail and Mail on Sunday newspapers.
The 2023 IEEE MRAM Forum showed progress in both standalone and embedded MRAM, particularly for auto apps. TSMC, YODA-S and UCLA showed advances in SOT and VCMA MRAM.