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DRAM replacement unveiled

DRAM replacement unveiled
electronicsweekly.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from electronicsweekly.com Daily Mail and Mail on Sunday newspapers.

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TSMC's 2022 Profit Forecast Cut By 10% By Investment Bank Due To Chip Industry Shrinkage


Mar 17, 2021 13:22 EDT
The Taiwan Semiconductor Manufacturing Company (TSMC) is likely to face an inventory correction in the first half of next year believes Daiwa Capital Markets. This correction had first been projected for the second quarter of this year, then postponed to the second half and now the investment research firm has further moved it ahead to 2022. As a result, Daiwa has reduced TSMC s profit estimate by 10% but at the same time increased the chipmaker s price target to 580 Yuan from an earlier 550 Yuan - reflecting is confidence in the long-term prospects of Taiwan s premium chipmaker.
TSMC s Hold Rating Reiterated By Daiwa As Firm Forecasts Chip Industry Revenue Shrinkage For 2022 ....

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Samsung demonstrates 3nm MBCFET chip: using nanochip structure to make transistors


Samsung demonstrates 3nm MBCFET chip: using nanochip structure to make transistors
Samsung Electronics and TSMC are currently planning to develop 3nm process technology research and development. According to reports, at the IEEE International Solid-State Circuits Conference (ISSCC), Samsung engineers shared the manufacturing details of the upcoming 3nm GAE MBCFET chip.
GAAFET transistors (gate full ring field-effect transistors) come in two forms in terms of structure, and they are an upgraded version of the current FinFET. Samsung stated that the traditional GAAFET process uses three layers of nanowires to construct transistors, and the gate is relatively thin. In addition, the Samsung MBCFET chip process uses nanosheets to construct transistors. Presently, Samsung has already registered a trademark for MBCFET. Samsung said that both methods can achieve 3nm, but it depends on the specific design. ....

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Samsung 3nm nanosheet transistor advantages described


It is expected that today s popular FinFET transistor design will give way to stacked nanosheet transistors in the coming years – for various design and technology reasons. TSMC plans to stick with FinFET for 3nm, but Samsung is bravely / dangerously forging ahead with plans for a transition to nanosheet transistors with its 3nm nodes, reports IEEE Spectrum.
Samsung Electronics vice president, Taejoong Song, presented at the IEEE International Solid-State Circuits Conference earlier this month and outlined some key advantages of nanosheet transistors. We have used FinFET transistors for about a decade, however at 3nm we are using a gate all around transistor, Song told the virtual audience. Going forward he and his team believe that nanosheet transistors will be a winning design as they provide high speed, low power, and small area. ....

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