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Soctera improves GaN HEMT thermal performance

Our selection of industry specific magazines cover a large range of topics. ....

Soctera Hemts , Austin Hickman , Cornell University , School Of Electrical , Cornell Nanoscale Facility , Dod Approved Gan , Defense Business Accelerator ,

Soctera Demonstrates Superior Thermal Performance in GaN HEMTs For Next-Generation Telecommunications and Radar Solutions

/PRNewswire/ Soctera, a developer of III-nitride power amplifiers, has demonstrated high-electron-mobility transistors (HEMTs) exhibiting a peak surface. ....

Cornell University , New York , United States , Austin Hickman , Otto Pohl , Soctera Hemts , Prnewswire Soctera , Score Communications , School Of Electrical , Soctera Inc , Cornell Nanoscale Facility , Dod Approved Gan , Defense Business Accelerator ,

Soctera demos superior thermal performance in GaN HEMTs for next-gen telecoms and radar

Third-party-verified III-nitride transistors, fabricated on 4-inch wafers produced at IQE, moving towards commercial production with standard foundry processes ....

Austin Hickman , Soctera Hemts , Nanoscale Facility , Dod Approved Gan , Defense Business Accelerator ,