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/PRNewswire/ Soctera, a developer of III-nitride power amplifiers, has demonstrated high-electron-mobility transistors (HEMTs) exhibiting a peak surface. ....
Third-party-verified III-nitride transistors, fabricated on 4-inch wafers produced at IQE, moving towards commercial production with standard foundry processes ....
Rochester firm awarded $1M in DOD-supported microelectronics challenge rbj.net - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from rbj.net Daily Mail and Mail on Sunday newspapers.
Gigantor Technologies Wins $2M Contract at Defense TechConnect Innovation Summit & Expo tmcnet.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from tmcnet.com Daily Mail and Mail on Sunday newspapers.