Credits: Image courtesy of the Singapore-MIT Alliance for Research and Technology.
Previous image
Next image
Researchers from the Low Energy Electronic Systems (LEES) interdisciplinary research group at the Singapore-MIT Alliance for Research and Technology (SMART), MIT’s research enterprise in Singapore, together with MIT and National University of Singapore (NUS), have discovered a new way to control light emission from materials.
Controlling the properties of materials has been the driving force behind many modern technologies from solar panels to computers, smart vehicles, and lifesaving hospital equipment. But materials properties have traditionally been adjusted based on their composition, structure, and sometimes size, and most practical devices that produce or generate light use layers of materials of different compositions that can often be difficult to grow.
SMART Investigates The Science Behind Varying Performance Of Different Colored LEDs
The findings pave the way to develop more efficient next-gen LEDs that cover the entire visible spectrum.
Researchers from the Low Energy Electronic Systems (LEES) interdisciplinary research group at Singapore-MIT Alliance for Research and Technology (SMART), MIT’s research enterprise in Singapore, together with MIT and National University of Singapore (NUS), have found a method to quantify the distribution of compositional fluctuations in the indium gallium nitride (InGaN) quantum wells at different indium concentrations.
InGaN light emitting diodes (LEDs) have revolutionized the field of solid-state lighting due to their high efficiencies and durability, and low costs. The color of the LED emission can be changed by varying the indium concentration in the InGaN compound, giving InGaN LEDs the potential to cover the entire visible spectrum. InGaN LEDs with relatively low amounts of indium compar
Credits: Image courtesy of the Singapore-MIT Alliance for Research and Technology
Previous image
Next image
Researchers from the Low Energy Electronic Systems (LEES) interdisciplinary research group at Singapore-MIT Alliance for Research and Technology (SMART), MIT’s research enterprise in Singapore, together with MIT and National University of Singapore (NUS), have found a method to quantify the distribution of compositional fluctuations in the indium gallium nitride (InGaN) quantum wells at different indium concentrations.
InGaN light emitting diodes (LEDs) have revolutionized the field of solid-state lighting due to their high efficiencies and durability, and low costs. The color of the LED emission can be changed by varying the indium concentration in the InGaN compound, giving InGaN LEDs the potential to cover the entire visible spectrum. InGaN LEDs with relatively low amounts of indium compared to gallium, such as the blue, green, and c
UV modulation by twisting crystal films
Films of the two-dimensional material hexagonal boron nitride can be used to control light emission from materials, according to the Singapore-MIT Alliance for Research and Technology (Smart).
The phenomenon involves the creation of ‘Moiré superlattices’ as two films are rotated with respect to one-another, and works at room temperature with films made from stacks of atoms around 100nm high – considered bulk materials and easier to manipulate than single-atom layers.
It was examined using ultra-violet cathodoluminescence in a scanning transmission electron microscope.
“A number of new physical phenomena, such as unconventional superconductivity, have been discovered recently by stacking individual layers of atomically-thin materials on top of each other at a twist angle, which results in the formation of what we call Moiré superlattices,” said Smart investigator Professor Silvija Gradecak. “Existing methods focus on stackin
SMART Breakthrough in Materials Discovery Enables ‘Twistronics’ for Bulk Systems
Written by AZoNanoApr 22 2021
Researchers from the Low Energy Electronic Systems (LEES) Interdisciplinary Research Group (IRG) at Singapore-MIT Alliance for Research and Technology (SMART), MIT’s research enterprise in Singapore together with Massachusetts Institute of Technology (MIT) and National University of Singapore (NUS) have discovered a new way to control light emission from materials.
SMART researchers show the phenomena related to the formation of moiré superlattices observed in monolayer-based two-dimensional systems can be translated to tune optical properties of three-dimensional, bulk-like hexagonal boron nitride, even at room temperature. Photo Credit: Nano Letters Cover, Volume 21, Issue 7