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Materials breakthrough enables twistronics for bulk systems

Credits: Image courtesy of the Singapore-MIT Alliance for Research and Technology. Previous image Next image Researchers from the Low Energy Electronic Systems (LEES) interdisciplinary research group at the Singapore-MIT Alliance for Research and Technology (SMART), MIT’s research enterprise in Singapore, together with MIT and National University of Singapore (NUS), have discovered a new way to control light emission from materials. Controlling the properties of materials has been the driving force behind many modern technologies from solar panels to computers, smart vehicles, and lifesaving hospital equipment. But materials properties have traditionally been adjusted based on their composition, structure, and sometimes size, and most practical devices that produce or generate light use layers of materials of different compositions that can often be difficult to grow.

SMART Investigates The Science Behind Varying Performance Of Different Colored LEDs

SMART Investigates The Science Behind Varying Performance Of Different Colored LEDs The findings pave the way to develop more efficient next-gen LEDs that cover the entire visible spectrum. Researchers from the Low Energy Electronic Systems (LEES) interdisciplinary research group at Singapore-MIT Alliance for Research and Technology (SMART), MIT’s research enterprise in Singapore, together with MIT and National University of Singapore (NUS), have found a method to quantify the distribution of compositional fluctuations in the indium gallium nitride (InGaN) quantum wells at different indium concentrations. InGaN light emitting diodes (LEDs) have revolutionized the field of solid-state lighting due to their high efficiencies and durability, and low costs. The color of the LED emission can be changed by varying the indium concentration in the InGaN compound, giving InGaN LEDs the potential to cover the entire visible spectrum. InGaN LEDs with relatively low amounts of indium compar

SMART investigates the science behind varying performance of different colored LEDs

Credits: Image courtesy of the Singapore-MIT Alliance for Research and Technology Previous image Next image Researchers from the Low Energy Electronic Systems (LEES) interdisciplinary research group at Singapore-MIT Alliance for Research and Technology (SMART), MIT’s research enterprise in Singapore, together with MIT and National University of Singapore (NUS), have found a method to quantify the distribution of compositional fluctuations in the indium gallium nitride (InGaN) quantum wells at different indium concentrations. InGaN light emitting diodes (LEDs) have revolutionized the field of solid-state lighting due to their high efficiencies and durability, and low costs. The color of the LED emission can be changed by varying the indium concentration in the InGaN compound, giving InGaN LEDs the potential to cover the entire visible spectrum. InGaN LEDs with relatively low amounts of indium compared to gallium, such as the blue, green, and c

SMART Breakthrough in Materials Discovery Enables Twistronics for Bulk Systems

SMART Breakthrough in Materials Discovery Enables ‘Twistronics’ for Bulk Systems Written by AZoNanoApr 22 2021 Researchers from the Low Energy Electronic Systems (LEES) Interdisciplinary Research Group (IRG) at Singapore-MIT Alliance for Research and Technology (SMART), MIT’s research enterprise in Singapore together with Massachusetts Institute of Technology (MIT) and National University of Singapore (NUS) have discovered a new way to control light emission from materials. SMART researchers show the phenomena related to the formation of moiré superlattices observed in monolayer-based two-dimensional systems can be translated to tune optical properties of three-dimensional, bulk-like hexagonal boron nitride, even at room temperature. Photo Credit: Nano Letters Cover, Volume 21, Issue 7

SMART breakthrough in materials discovery enables twistronics for bulk systems

Date Time SMART breakthrough in materials discovery enables twistronics for bulk systems The findings allow manipulation of materials for the first time by stacking films at a twist angle, allowing a new way to control light emitting from materials Recent discoveries focused on manipulation of atomically-thin 2D materials, while the new breakthrough can be used to stack technologically-relevant 3D materials at a twist angle Method allows continuous, systematic control of optical emission intensity and energy, and can produce ultraviolet emissions at room temperature for bulk systems The discovery can be significant for applications in medicine, environmental or information technologies. Researchers from the Low Energy Electronic Systems (LEES) Interdisciplinary Research Group (IRG) at Singapore-MIT Alliance for Research and Technology (SMART), MIT’s research enterprise in Singapore together with Massachusetts Institute of Technology (MIT) and National University of Singap

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