ROHM s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices – EEJournal eejournal.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from eejournal.com Daily Mail and Mail on Sunday newspapers.
Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds on the order of
Class-leading unit of nanoseconds gate drive contributes to greater energy savings and miniaturization in LiDAR applications and data centersSanta Clara, CA and Kyoto, Japan, Nov. 08, 2023 ROHM.