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IMAGE: Schematic representation of Fe3GeTe2-based non-volatile memory prototype. Fe3GeTe2 is a ferromagnet, where its spins (little white arrows) align in the same direction. The orientation of the spins defines 1 or.
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Credit: POSTECH & SNU
Researchers at Pohang University of Science and Technology (POSTECH) and Seoul National University in South Korea have demonstrated a new way to enhance the energy efficiency of a non-volatile magnetic memory device called SOT-MRAM. Published in
Advanced Materials, this finding opens up a new window of exciting opportunities for future energy-efficient magnetic memories based on spintronics.
In modern computers, the random access memory (RAM) is used to store information. The SOT-MRAM (spin-orbit torque magnetic RAM) is one of the leading candidates for the next-generation memory technologies that aim to surpass the performance of various existing RAMs. The SOT-MRAM may operate faster than th ....

Soult Ukpyolsi , South Korea , Kyongsang Bukto , Kaixuan Zhang , Researchers At Pohang University Of Science , Institute For Basic Science In Korea , Department Of Physics At Seoul National University , Seoul National University , Department Of Physics , Pohang University , Advanced Materials , Professor Hyun Woo Lee , Professor Je Geun Park , Correlated Electron Systems , Basic Science , Professor Park , தெற்கு கொரியா , நிறுவனம் க்கு அடிப்படை அறிவியல் இல் கொரியா , துறை ஆஃப் இயற்பியல் இல் சியோல் தேசிய பல்கலைக்கழகம் , சியோல் தேசிய பல்கலைக்கழகம் , துறை ஆஃப் இயற்பியல் , ப்ரொஃபெஸர் யுங் வூ லீ , அடிப்படை அறிவியல் , ப்ரொஃபெஸர் பூங்கா ,