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Aug 12 2021 Understanding the physical properties of a material ’ s surface and interface is more challenging than understanding those of its inner bulk. ....
Discovering a New Form Of Magnetism in Magnetic Graphene Thought LeadersDr. Matthew CoakDepartment of Physics, The University of WarwickCavendish Laboratory, The University of Cambridge AZoNano speaks with Dr. Matthew Coak from the University of Warwick and the University of Cambridge, leader of an international team that has identified a new form of magnetism in so-called magnetic graphene - this could lead to new ways of understanding superconductivity in this unusual type of material. Can you give our readers a summary of your recent research? We have measured the magnetic properties of a layered material under extreme conditions of pressure. We carried out the first high-pressure neutron diffraction study on the TMPS3 family of van-der-Waals materials (TM = a transition-metal), compounds currently under intense research scrutiny worldwide. ....
Seoul National University researchers build a non-volatile magnetic memory prototype. Researchers at Seoul National University (South Korea) have developed the first prototype of a non-volatile magnetic memory device entirely based on a nanometer-thin layered material, which can be tuned with a tiny current. Published in Advanced Materials, this finding opens up a new window of exciting opportunities for future energy-efficient magnetic memories based on spintronics. In our current computers, the random access memory (RAM) consumes a lot of energy and loses information as soon as the energy supply is powered off. Spintronics enables the development of a fast, non-volatile and energy-efficient RAM: magnetic RAM (MRAM). ....
E-Mail IMAGE: Schematic representation of Fe3GeTe2-based non-volatile memory prototype. Fe3GeTe2 is a ferromagnet, where its spins (little white arrows) align in the same direction. The orientation of the spins defines 1 or. view more Credit: POSTECH & SNU Researchers at Pohang University of Science and Technology (POSTECH) and Seoul National University in South Korea have demonstrated a new way to enhance the energy efficiency of a non-volatile magnetic memory device called SOT-MRAM. Published in Advanced Materials, this finding opens up a new window of exciting opportunities for future energy-efficient magnetic memories based on spintronics. In modern computers, the random access memory (RAM) is used to store information. The SOT-MRAM (spin-orbit torque magnetic RAM) is one of the leading candidates for the next-generation memory technologies that aim to surpass the performance of various existing RAMs. The SOT-MRAM may operate faster than th ....