Imec has developed aluminum-nitride/gallium-nitride (AlN/GaN) metal-insulator-semiconductor high-electron mobility transistors (MISHEMTs) on 200mm Si with high output power and energy efficiency while operating at 28GHz.
LEUVEN (Belgium), December 13, 2023 This week, at the 2023 International Electron Devices Meeting (IEEE IEDM 2023), imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents extremely scaled spin-orbit transfer magnetic random-access memory (SOT-MRAM) devices showing the best published performance ever. Achieving a switching energy below 100 femto-Joule per bit and…
During the IEEE International Electron Devices Meeting (IEDM) Future of Logic session, TSMC announced that their 1.4nm manufacturing process is already under development. Additionally, they reiterated that mass manufacturing using their 2nm-class fabrication technology is scheduled to begin in 2025. According to a graphic shared by Dylan Patel (via Tom's Hardware), TSMC's 1.4nm node is …