Page 7 - சிகே News Today : Breaking News, Live Updates & Top Stories | Vimarsana

New Transistor Structures At 3nm/2nm Gate-all-around FETs will replace finFETs, but the transition will be costly and difficult. Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into production is going to be difficult and expensive. Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-around field-effect transistors (GAA FETs) at the 3nm and 2nm nodes, starting either next year or in 2023. GAA FETs hold the promise of better performance, lower power, and lower leakage, and they will be required below 3nm, when finFETs run out of steam. But even though these newfangled transistors are considered an evolutionary step from finFETs, and they have been in R&D for years, any new transistor type or material is a huge undertaking for the chip industry. Chipmakers have been postpo

Andrew crossShogo mochizukiHandel jonesNerissa draegerAshish agrawalRobert clarkAki fujimuraSylvain barraudScott hooverNicolas loubetLeti semiconductor engineeringLam researchSri samavedamDavid friedஆண்ட்ரூ குறுக்குஹேண்டல் ஜோன்ஸ்