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Home > Press > CEA-Leti Papers at IEDM 2020 Highlight Progress in Overcoming Challenges to Making GaN Energy-Saving, Power-Electronics Devices: Gallium Nitride Seen as Highly Efficient Replacement for Silicon In Wide Range of Consumer and Industrial Uses
Abstract:
Two complementary research papers from CEA-Leti confirmed that the institutes approach to gallium-nitride (GaN) technologies is on track overcome challenges in the architecture and performance of advanced GaN devices embedding a MOS gate, and targeting the fast-growing global market for power-conversion systems.
CEA-Leti Papers at IEDM 2020 Highlight Progress in Overcoming Challenges to Making GaN Energy-Saving, Power-Electronics Devices: Gallium Nitride Seen as Highly Efficient Replacement for Silicon In Wide Range of Consumer and Industrial Uses
Tower Semiconductor and OPIX Announce the Successful Development of a World Class iToF Technology Platform for 3D Imaging and Face Recognition Applications GlobeNewswire
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Featuring state of the art performance including multiple depth sensing and distance measurement applications for a broad range of fast-growing markets such as mobile, AR/VR, retail, robotics, and automation
Based on Tower’s leading-edge pixel-level stacked wafer BSI technology with enhanced NIR sensitivity
MIGDAL HAEMEK, Israel, and SHENZEN, China, December 15, 2020 – Tower Semiconductor (NASDAQ/TASE: TSEM), the leader in high-value analog semiconductor foundry solutions, and OPIX, an innovative supplier of 3D Time-of-Flight (ToF) image sensor solutions, today announced the successful development of a world class iToF technology platform for 3D imaging and face recognition, featuring multiple depth sensing and distance measurement applications for a broad range of m
Politik Güğüm - 10 Aralık 2020 61saat.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from 61saat.com Daily Mail and Mail on Sunday newspapers.