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Press release content from Globe Newswire. The AP news staff was not involved in its creation. NXP Brings GaN to 5G Multi-Chip Modules for Energy-Efficient Mobile Networks NXP Semiconductors N.V.June 28, 2021 GMT GaN performance in NXP’s multi-chip modules for 5G infrastructure increases efficiency by 8 percentage points Reduces size and weight of radios; accelerates the design and deployment of 5G systems NXP combines multiple technologies to drive optimal performance EINDHOVEN, Netherlands, June 28, 2021 (GLOBE NEWSWIRE) NXP Semiconductors N.V. (NASDAQ: NXPI) today announced a major industry milestone for 5G energy efficiency with the integration of Gallium Nitride (GaN) technology to its multi-chip module platform. Building on the company’s investment in its GaN fab in Arizona, the most advanced fab dedicated to RF power amplifiers in the United States, NXP is the first to announce RF solutions for 5G massive MIMO that combine the high efficiency of GaN with the compa

United statesMing yuePaul hartGallium nitrideRadio power business lineAccess edge portfolioஒன்றுபட்டது மாநிலங்களில்மிங் யூஎபால் ஹார்ட்