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Home > Press > Stress-free path to stress-free metallic films paves the way for next-gen circuitry: Optimized sputtering technique helps minimize stress in tungsten thin films
(top left) An illustration of the HiPIMS process (top right) The energy distribution of tungsten ions arriving at the substrate over time. At short times, there are a large proportion of ions with high energy. (bottom) Stress-free tungsten films created with the selective pulsed bias technique. (a) Plan view transmission electron microscopy (TEM) image of the film; (b) a higher resolution image; (c) reconstructions of the selected area in (b) based on inverse Fourier transforms, with two regions magnified.