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Gallium Nitride-Doped Devices Shown to Be More Energy-Efficient
New high-power electronic devices have been developed by engineers that are significantly more energy efficient than previous technology. A new technique for carefully “doping” gallium nitride (GaN) allows for the creation of the devices.
Hayden breckenridge
Seiji mita
Pramod reddy
Ronny kirste
Spyridon pavlidis
Shane stein
Kacper sierakowski
Shashwat rathkanthiwar
Baxter moody
James tweedie
Grzegorz kamler
Erhard kohn
Skyla baily
Institute of high
National science foundation
Ulm university
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