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New high-power electronic devices have been developed by engineers that are significantly more energy efficient than previous technology. A new technique for carefully “doping” gallium nitride (GaN) allows for the creation of the devices.

Hayden breckenridgeSeiji mitaPramod reddyRonny kirsteSpyridon pavlidisShane steinKacper sierakowskiShashwat rathkanthiwarBaxter moodyJames tweedieGrzegorz kamlerErhard kohnSkyla bailyInstitute of highNational science foundationUlm university