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JEDEC Wide Bandgap Power Semiconductor Committee Publishes a Milestone Document for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices

JEDEC Wide Bandgap Power Semiconductor Committee Publishes a Milestone Document for Reverse Bias Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices
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Emily desjardinsKurt smithRon barrPower electronics conference in long beachGan technologyTask groupSolid state technology associationState technology associationReverse bias reliability evaluation proceduresGallium nitride power conversionNitride subcommitteeTime dependent breakdownHigh temperature reverse bias stressApplication specific stress testingGan focused guidelineReverse bias reliability evaluation

JEDEC publishes guidelines for reverse-bias reliability evaluation of GaN power conversion devices

Suggested stress conditions and test parameters for evaluating TDB reliability of GaN power transistors

United statesKurt smithRon barrTask groupWide bandgap power conversion semiconductor committeePower electronics conference expositionSolid state technology associationEstate technologyReverse bias reliability evaluationGallium nitride power conversionNitride subcommitteePower conversion semiconductorHigh temperature reverse bias stressApplication specificGan focused guidelineApplied power electronics conference