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Suggested stress conditions and test parameters for evaluating TDB reliability of GaN power transistors

United statesKurt smithRon barrTask groupWide bandgap power conversion semiconductor committeePower electronics conference expositionSolid state technology associationEstate technologyReverse bias reliability evaluationGallium nitride power conversionNitride subcommitteePower conversion semiconductorHigh temperature reverse bias stressApplication specificGan focused guidelineApplied power electronics conference