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JEDEC® Updates Universal Flash Storage (UFS) and Supporting Memory Interface Standard

JEDEC® Updates Universal Flash Storage (UFS) and Supporting Memory Interface Standard
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JEDEC Publishes Update to DDR5 SDRAM Standard Used in High-Performance Computing Applications

ARLINGTON, Va., Oct. 26, 2021 – JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry,

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Samsung Develops Industrys First HKMG-Based DDR5 Memory; Ideal for Bandwidth-Intensive Advanced Computing Applications

Posted March 25th, 2021 for Samsung 512GB capacity DDR5 module made possible by an 8-layer TSV structure HKMG material reduces power by 13 percent while doubling the speed of DDR4 Samsung Electronics, the world leader in advanced memory technology, today announced that it has expanded its DDR5 DRAM memory portfolio with the industry’s first 512GB DDR5 module based on High-K Metal Gate (HKMG) process technology. Delivering more than twice the performance of DDR4 at up to 7,200 megabits per second (Mbps), the new DDR5 will be capable of orchestrating the most extreme compute-hungry, high-bandwidth workloads in supercomputing, artificial intelligence (AI) and machine learning (ML), as well as data analytics applications.

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Samsung Develops Industry s First HKMG-Based 512GB DDR5 Memory Module

Samsung Develops Industry s First HKMG-Based 512GB DDR5 Memory Module
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Samsung Develops DDR5 Memory Modules With 512 GB Capacity, Up To 7200 Mb/s

Samsung Develops DDR5 Memory Modules With 512 GB Capacity, Up To 7200 Mb/s
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