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Nexperia s first SiC MOSFETs raise the bar for safe, robust and reliable power switching in industrial applications – CIE

Nexperia s first SiC MOSFETs raise the bar for safe, robust and reliable power switching in industrial applications – CIE
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Toru iwagamiKatrin feurleMitsubishi electricSemiconductor device group in mitsubishiPower device worksDevice group

Nexperia s first SiC MOSFETs raise the bar for safe, robust and reliable power switching in industrial applications – EEJournal

Nijmegen, November 30, 2023: Nexperia today announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ. NSF040120L3A0 and NSF080120L3A0 are the first in a series of planned releases which will see Nexperia’s SiC MOSFET portfolio quickly expand to include devices with a variety of…

Nexperia mosfetsToru iwagamiKatrin feurleHead of product group siMitsubishi electricSemiconductor device group in mitsubishiSenior directorProduct group sicSenior general mangerPower device worksDevice group

New Electronics - Nexperia announces first SiC MOSFETs

Nexperia has announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ.

Katrin feurleMitsubishi electricHead of product group siSenior directorProduct group sic

Nexperia launches discrete 1200 V devices as its first silicon carbide MOSFETs

First products of Nexperia–Mitsubishi Electric partnership on SiC power semiconductors

Toru iwagamiKatrin feurleSemiconductor device group at mitsubishiProduct group siMitsubishi electricWingtech technology co ltdProduct group sicPower device works

Nexperia releases first SiC MOSFETs

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Katrin feurleToru iwagamiSemiconductor device group in mitsubishiMitsubishi electricSenior general mangerPower device worksDevice group

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