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Nexperia has announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ.

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Katrin Feurle ,Mitsubishi Electric ,Mitsubishi ,Head Of Product Group Si ,Senior Director ,Product Group Sic ,

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