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 E-Mail IMAGE: Schematic representation of Fe3GeTe2-based non-volatile memory prototype. Fe3GeTe2 is a ferromagnet, where its spins (little white arrows) align in the same direction. The orientation of the spins defines 1 or. view more  Credit: POSTECH & SNU Researchers at Pohang University of Science and Technology (POSTECH) and Seoul National University in South Korea have demonstrated a new way to enhance the energy efficiency of a non-volatile magnetic memory device called SOT-MRAM. Published in Advanced Materials, this finding opens up a new window of exciting opportunities for future energy-efficient magnetic memories based on spintronics. In modern computers, the random access memory (RAM) is used to store information. The SOT-MRAM (spin-orbit torque magnetic RAM) is one of the leading candidates for the next-generation memory technologies that aim to surpass the performance of various existing RAMs. The SOT-MRAM may operate faster than the fastest existing RA

Soult ukpyolsiSouth koreaKyongsang buktoKaixuan zhangResearchers at pohang university of scienceInstitute for basic science in koreaDepartment of physics at seoul national universitySeoul national universityDepartment of physicsPohang universityAdvanced materialsProfessor hyun woo leeProfessor je geun parkCorrelated electron systemsBasic scienceProfessor park