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IMAGE: Schematic representation of Fe3GeTe2-based non-volatile memory prototype. Fe3GeTe2 is a ferromagnet, where its spins (little white arrows) align in the same direction. The orientation of the spins defines 1 or. view more
Credit: POSTECH & SNU
Researchers at Pohang University of Science and Technology (POSTECH) and Seoul National University in South Korea have demonstrated a new way to enhance the energy efficiency of a non-volatile magnetic memory device called SOT-MRAM. Published in
Advanced Materials, this finding opens up a new window of exciting opportunities for future energy-efficient magnetic memories based on spintronics.
In modern computers, the random access memory (RAM) is used to store information. The SOT-MRAM (spin-orbit torque magnetic RAM) is one of the leading candidates for the next-generation memory technologies that aim to surpass the performance of various existing RAMs. The SOT-MRAM may operate faster than the fastest existing RA