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Page 8 - 122nm News Today : Breaking News, Live Updates & Top Stories | Vimarsana

1 8V/3 3V Switchable GPIO With 5V I2C Open - Drain & Analog Cells in Samsung 11nm LPP

SAMSUNG 11nm Flip-Chip IO library with dynamically switchable 1.8V/3.3V GPIO with fail-safe capability, 5V I2C / SMBUS open-drain cell, 5V OTP cell, 1.8V .

General purposeOpen drain8v 3 3v switchable gpio with 5v i2c open drain amp analog cells in samsung 11nm lppAmsung 11nm io libraryP coreIlicon ipEmiconductor ip

Brainchip Holdings Limited/ADR: BrainChip Tapes Out AKD1500 Chip in GlobalFoundries 22nm FD SOI Process

LAGUNA HILLS, CA / ACCESSWIRE / January 29, 2023 / BrainChip Holdings Ltd (ASX:BRN)(OTCQX:BRCHF)(ADR:BCHPY), the world's first commercial producer of ultra-low power, fully digital, event-based, neuromorphic

Mark smithTensorflow kerasTony daweBrainchip holdings ltdBrainchip holdings limited adrviewAnil mankarChief development officerGlobal investorBrainchip holdingsProfi marcel torney

Weebit Nano tapes-out first 22nm demo chip

Weebit ReRAM in 22nm FD-SOI process provides cost-effective, reliable embedded NVM for IoT, edge AI and other ultra-low power applications.

Ha afonUnited statesCoby hanochTristan everettOlivier faynotWeebit reJen bernier santariniWeebit nanoEric kuretAutomic groupHead of silicon component divisionWeebit nano ltdWeebit nano limitedNano limitedResistive random access memorySilicon component division

Samsung Electronics Co , Ltd : Samsung Electronics Develops Industry s First 12nm-Class DDR5 DRAM

Set to begin mass production in 2023, Samsung's new DRAM will advance next-generation computing, data centers and AI applications with industry-leading performance and greater power efficiency Samsung

Joe macriJooyoung leeUjeong jahnkeSamsung electronics co ltdProduct technology at samsung electronicsSamsung semiconductor europe gmbBusiness wireExecutive vice presidentCorporate fellowSamsung newsroomSemiconductor europe gmbh

Avalanche Technology and UMC Announce 22nm Production of High-Density MRAM-Based Devices for Aerospace Applications

Avalanche Technology, the leader in next generation MRAM technology, and United Microelectronics Corporation (NYSE: UMC; TWSE: 2303) (“UMC”), a leading semiconductor foundry, announced today the immediate availability of new High-Reliability Persistent SRAM (P-SRAM) memory devices through UMC’s 22nm process technology.

Yiming huaiDanny sabourBusiness development at avalanche technologyTechnology foundry business at avalancheUnited microelectronics corporationDelivery officeResearch developmentAvalanche technology incAvalanche technologyHigh reliability persistentSpin transfer torque magnetoresistiveVice presidentBusiness developmentResult delivery officeMagnetic tunnel junctionsChief technology officer

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