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Avalanche Technology Shipping High Density Bootable MRAM Solutions for FPGAs in Space

Fremont, California (PRWEB) January 09, 2023 Avalanche Technology, the leader in next generation MRAM technology announced today the immediate availability

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Researchers to Showcase 25 nm iPMA Hexa-MTJ Technology for Scalable eFlash Type STT-MRAM

Researchers to Showcase 25 nm iPMA Hexa-MTJ Technology for Scalable eFlash Type STT-MRAM
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San franciscoUnited statesInternational electron device meetingTohoku university centerProfessor tetsuo endoh groupMagnetic tunnel junctionsTohoku universityInnovative integrated electronic systemsElectron device meetingSpin transfer torque magnetoresistive

Researchers to Showcase 25 nm iPMA Hexa-MTJ Technology for Scalable eFlash Type STT-MRAM

Researchers to Showcase 25 nm iPMA Hexa-MTJ Technology for Scalable eFlash Type STT-MRAM
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San franciscoUnited statesInternational electron device meetingTohoku university centerProfessor tetsuo endoh groupTohoku universityMagnetic tunnel junctionsInnovative integrated electronic systemsElectron device meetingSpin transfer torque magnetoresistiveElectron device

Avalanche Technology and TMS-Elektronik Announce Representation Agreement for the Republic of Turkey

Fremont, California (PRWEB) October 17, 2022 Avalanche Technology, the leader in next generation MRAM technology, today announced that it has entered into

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Avalanche Technology and UMC Announce 22nm Production of High-Density MRAM-Based Devices for Aerospace Applications

Avalanche Technology, the leader in next generation MRAM technology, and United Microelectronics Corporation (NYSE: UMC; TWSE: 2303) (“UMC”), a leading semiconductor foundry, announced today the immediate availability of new High-Reliability Persistent SRAM (P-SRAM) memory devices through UMC’s 22nm process technology.

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