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Ganga Hospital’s spine research team wins international award Updated: Updated: Share Article AAA For the third time in a row, the spine research team of Ganga Hospital, Coimbatore, has won the North American Spine Society’s (NASS) outstanding paper award in basic science. By bagging the award for 2021 for the paper ‘ Why do Modic Changes Result in Poor Clinical Outcomes? – Novel Insights from Proteomic analysis of Lumbar discs with Modic changes’, Ganga Hospital became the first institution to have won the honour consecutively for three years. “This is a very coveted award which is jointly awarded by NASS and The Spine Journal (TSJ) which is the official research publication journal of the society. All the spine research organisations around the world fiercely compete for these awards,” said S. Rajasekaran, chairman of the Department of Orthopaedic and Spine Surgery at Ganga Hospital who heads the team. ....
E-Mail DALLAS, Feb. 23, 2021 Women face many female-specific risks for heart disease and stroke, including pregnancy, physical and emotional stress, sleep patterns and many physiological factors, according to multiple studies highlighted in this year’s Go Red for Women® special issue of the Journal of the American Heart Association, published online today. “Although cardiovascular disease is the leading cause of death in men and women, women are less likely to be diagnosed and receive preventive care and aggressive treatment compared to men,” said Journal of the American Heart Association Editor-in-Chief Barry London, M.D., Ph.D., Ph.D., the Potter Lambert Chair in Internal Medicine, director of the division of cardiovascular medicine, director of the Abboud Cardiovascular Research Center, professor of cardiovascular medicine and professor of molecular physiology and biophysics at the University of Iowa’s Carver College of Medicine in Iowa City, Iowa ....
December 18, 2020 CEA-Leti Papers at IEDM 2020 Highlight Progress in Overcoming Challenges to Making GaN Energy-Saving, Power-Electronics Devices Gallium Nitride Seen as Highly Efficient Replacement for Silicon In Wide Range of Consumer and Industrial Uses GRENOBLE, France – Dec. 16, 2020 – Two complementary research papers from CEA-Leti confirmed that the institute’s approach to gallium-nitride (GaN) technologies is on track overcome challenges in the architecture and performance of advanced GaN devices embedding a MOS gate, and targeting the fast-growing global market for power-conversion systems. In papers presented at IEDM 2020, scientists recounted experiments with variations of high-electron- mobility transistors (HEMT) based on gallium nitride-on-silicon (GaN-on-Si), called GaN-on-Si HEMT. GaN-based semiconductors improve both performance and reliability of increasingly compact power converters compared to silicon, and AIGaN/GaN HEMTs have shown ....
Our NanoNews Digest Sponsors Home > Press > CEA-Leti Papers at IEDM 2020 Highlight Progress in Overcoming Challenges to Making GaN Energy-Saving, Power-Electronics Devices: Gallium Nitride Seen as Highly Efficient Replacement for Silicon In Wide Range of Consumer and Industrial Uses Abstract: Two complementary research papers from CEA-Leti confirmed that the institutes approach to gallium-nitride (GaN) technologies is on track overcome challenges in the architecture and performance of advanced GaN devices embedding a MOS gate, and targeting the fast-growing global market for power-conversion systems. CEA-Leti Papers at IEDM 2020 Highlight Progress in Overcoming Challenges to Making GaN Energy-Saving, Power-Electronics Devices: Gallium Nitride Seen as Highly Efficient Replacement for Silicon In Wide Range of Consumer and Industrial Uses ....
Leti highlights progress in GaN power electronics Micro/nanotechnology R&D center CEA-Leti of Grenoble, France says that two complementary research papers presented at the 66th IEEE International Electron Devices Meeting (IEDM 2020) confirm that its approach to gallium nitride (GaN) technologies is on track to overcome challenges in the architecture and performance of advanced GaN devices embedding a MOS gate, and targeting the fast-growing global market for power-conversion systems. Researchers recounted experiments with variations of high-electron-mobility transistors (HEMTs) based on GaN-on-silicon (GaN-on-Si). Compared with silicon, GaN-based semiconductors improve both performance and reliability of increasingly compact power converters, and AlGaN/GaN HEMTs have shown the potential to replace power-conversion solutions based on silicon or silicon carbide (SiC) for high-frequency applications with high power and low noise. This technology is therefore exp ....