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Barron discusses broad impact of Penn State research for trustees psu.edu - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from psu.edu Daily Mail and Mail on Sunday newspapers.
Finding new types of 2D material defects could enable better electronics miragenews.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from miragenews.com Daily Mail and Mail on Sunday newspapers.
Penn State facility enables development of new ultra-thin materials for advanced electronics Roman Herbert-Engel, assistant professor of materials science and engineering, characterizes chalcogenide thin films with a graduate student in a Two-Dimensional Crystal Consortium lab in 2017. Image: Penn State MRI NSF renews funding for Two-Dimensional Crystal Consortium May 25, 2021 UNIVERSITY PARK, Pa. The National Science Foundation (NSF) announced a renewal of funding for the Materials Innovation Platform (MIP) national user facility at Penn State’s Materials Research Institute (MRI), the Two-Dimensional Crystal Consortium (2DCC). The 2DCC is one of four MIPs in the United States and was awarded $20.1 million over five years, an increase of 13% above the initial award in 2016. ....
Transistors built from ultra-thin 2D materials take a step forward Two-dimensional materials can be used to create smaller, high-performance transistors traditionally made of silicon, according to Saptarshi Das, assistant professor of engineering science and mechanics (ESM) in Penn State’s College of Engineering. Das and his collaborators report in Nature Communications on tests to determine the technological viability of transistors made from 2D materials. Transistors are tiny digital switches found in cell phones, computer circuits, smart watches and the like. “We live in a digital and connected world driven by data,” Das said. “Big data requires increased storage and processing power. If you want to store or process more data, you need to utilize more and more transistors.” ....