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Researchers Develop Graphene-Driving Strain Engineering Method

AlN-based materials’ straight band gap makes them ideal for producing DUV optoelectronic devices, which have a variety of applications in curing, water and air disinfection, medicine, and biochemistry, among others. ....

Peng Gao , Tongbo Wei , Alex Smith , Shenyuan Yang , Zhongfan Liu , Jingyuan Shan , Zhaolong Chen , Yaqi Gao , Junxi Wang , Jinmin Li , Hongliang Chang , Waals Qvd , Jingyu Sun , Bingyao Liu , Zhiqiang Liu , Jianchang Yan , Zhetong Liu , Institute Of Semiconductors , Semiconductor Lighting Technology , Development Center , Chinese Academy Of Sciences , Facilitate Strain Free Epitaxy , Relative Raman , Chinese Academy , Light Science ,

Nanotechnology Now - Press Release: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode Peer-Reviewed Publication

Nanotechnology Now - Press Release: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode Peer-Reviewed Publication
nanotech-now.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from nanotech-now.com Daily Mail and Mail on Sunday newspapers.

Peng Gao , Tongbo Wei , Shenyuan Yang , Zhongfan Liu , Jingyuan Shan , Zhaolong Chen , Yaqi Gao , Junxi Wang , Jinmin Li , Hongliang Chang , Waals Qvd , Jingyu Sun , Bingyao Liu , Zhiqiang Liu , Yaobiao Li , Jianchang Yan , Zhetong Liu , Institute Of Semiconductors , Changchun Institute Of Optics , Development Center , Chinese Academy Of Sciences , Light Publishing Center , Semiconductor Lighting Technology , Wave Inc , Home Press , Relative Raman ,