Samsung's unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today's conventional planar NAND architecture. 3D V-NAND stacks 32 cell layers vertically over one another rather than decreasing cell dimensions and trying to fit itself onto a fixed horizontal space. As a result, the technology provides higher density and better performance utilizing a smaller footprint. Achieve ultimate read/write performance to maximize your everyday computing experience with Samsung's TurboWrite technology. Compared to the 840 EVO, the 850 EVO shows an increased overall user experience of approximately 13% , partly thanks to