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Understanding Graphene Growth on Insulating Substrates
The thinnest material, graphene, is the most promising materials for many applications, such as in electronics, energy storage and etc. For high performance electronic applications, synthesizing graphene directly on an insulating substrate is highly desired. To date, a great deal of efforts has been dedicated to synthesizing graphene on numerous insulating substrates, such as SiO2, Al2O3, Si3N4, BN. It is found that the growth of graphene on these insulating substrates are generally 10,000 times slower than that on metallic substrates (Figure 1) and, as a consequence, the graphene synthesized on an insulating substrate is generally with very low quality and the productivity is very low. To understand why graphene growth on an insulating substrate is so different from that on metallic substrates is critical for optimizing the experiential design but such a question has never been answered satisfactory. ....

Ting Cheng , Feng Ding , South Korea , Dahee Carol Kim , Zhongfan Liu , Institute For Basic Science , Communications Team , School Of Materials Science , Professor Zhirong Liu College Of Chemistry , Institute Of Basic Science , Distinguished Professor Feng Ding , Multidimensional Carbon Materials , Basic Science , Professor Zhongfan Liu , Professor Zhirong Liu , Molecular Engineering , Peking University , Materials Science , டிங் செங் , ஃபெங் டிங் , தெற்கு கொரியா , நிறுவனம் க்கு அடிப்படை அறிவியல் , தகவல்தொடர்புகள் அணி , பள்ளி ஆஃப் பொருட்கள் அறிவியல் , நிறுவனம் ஆஃப் அடிப்படை அறிவியல் , பல பரிமாண கார்பன் பொருட்கள் ,