A new set of advanced nanofabrication equipment will make MIT.nano one of the world’s most advanced research facilities in microelectronics and related technologies, unlocking new experimental opportunities and easing the path for promising inventions to become impactful new products.
A new method enables 2D-material semiconductor transistors to be directly integrated onto a fully fabricated 8-inch silicon wafer, which could enable a new generation of transistor technology, denser device integration, new circuit architectures, and more powerful chips.
Atomically thin materials are a promising alternative to silicon as the basis for new transistors, but connecting those “2D” materials to other conventional electronic components has proved difficult. Researchers at MIT and elsewhere have found a new way of making those electrical connections, which could help to unleash the potential 2D materials and further the miniaturization of components.