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Transphorm s TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications -October 10, 2023 at 08:33 am EDT

Three New Devices Bring SuperGaN’s Normally-Off D-Mode Platform Advantages to SMD-Based High Power Systems Requiring Higher Reliability and Performance with Lower Thermals in a Compact Footprint .

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CGD s ICeGan HEMTs awarded Best Demo at TSMC European innovation zone – CIE

CGD s ICeGan HEMTs awarded Best Demo at TSMC European innovation zone – CIE
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Transphorm, Inc : Transphorm s TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications

Transphorm, Inc : Transphorm s TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications
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Transphorm s TOLL FETs Position GaN as Optimal Devices for Power Hungry AI Applications Seite 1

10.10.2023 - Transphorm, Inc. (Nasdaq: TGAN), a global leader in robust GaN power semiconductors, the future of next generation power systems, today introduced three SuperGaN FETs in TOLL packages with on-resistances of 35, 50, and 72 milliohms. Transphorm’s . Seite 1

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