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Samsung Announces 3nm Process Node, the First with Gate-All-Around FETs

It appears that Samsung is the – ahem – first out of the gate with a gate-all-around (GAA) FET IC process technology. The company recently announced initial semiconductor production with its 3nm process node. Samsung’s trademarked name for its version of a GAAFET is “MBCFET,” which stands for “Multi-Bridge-Channel FET.” Since a picture is often… ....

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Samsung beats competitor TSMC to become first to produce 3-nanometer chips

Samsung beats competitor TSMC to become first to produce 3-nanometer chips
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New Electronics - Siemens extends support of multiple IC design solutions for TSMC's latest processes

Siemens Digital Industries Software has used the TSMC 2022 Technology Symposium to announce that its ongoing collaboration with TSMC has resulted in new product certifications for several of Siemens’ most advanced toolsets. ....

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Cadence Design IP Portfolio in TSMC's N5 Process Gains Broad Adoption Among Leading Semiconductor, System Companies

Cadence Design IP Portfolio in TSMC's N5 Process Gains Broad Adoption Among Leading Semiconductor, System Companies
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