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PCIM 2024: Innoscience to show that GaN devices are price-comparative with silicon, very reliable and available as discrete (InnoGaN™), integrated (SolidGaN™) and bi-directional (V-GaN™)

PCIM 2024: Innoscience to show that GaN devices are price-comparative with silicon, very reliable and available as discrete (InnoGaN™), integrated (SolidGaN™) and bi-directional (V-GaN™)
eejournal.com - get the latest breaking news, showbiz & celebrity photos, sport news & rumours, viral videos and top stories from eejournal.com Daily Mail and Mail on Sunday newspapers.

Denis Marcon , Yole Group , Innoscience Technology , June Dr Denis Marcon , General Manager Europe , Tech Stage , More Efficient , Hall Gan ,

Process and Control Today | Innoscience to discuss datacenter applications and present new products and integrated GaN ICs at APEC 2024

Process and Control Today | Innoscience to discuss datacenter applications and present new products and integrated GaN ICs at APEC 2024
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Yi Sun , Innoscience Europe , Innoscience America , Ohm Innoga , Denis Marcon , Pengju Kong , Power Electronics Conference , Innoscience Technology , Artificial Intelligence , Ohm Innogan , General Manager Innoscience Europe , General Manager Innoscience America , Tuesday Feb , High Frequency , Buck Converter , Mobile Phone , Wednesday Feb ,

Process and Control Today | Innoscience introduces new 100V bi-directional GaN IC for 48V/60V Battery Management System (BMS) applications

Process and Control Today | Innoscience introduces new 100V bi-directional GaN IC for 48V/60V Battery Management System (BMS) applications
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Denis Marcon , Innoscience Europe , Si Mosfets , Innoscience Technology , Battery Management System , General Manager ,

Innoscience introduces new 100V bi-directional GaN IC for 48V/60V Battery Management System (BMS) applications

12th February 2024 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has launched a new 100V bi-directional member of the company’s VGaN IC family. The first family of VGaN devices rated 40V with wide on-resistance range (1.2mOhm – 12mOhm) have been successfully deployed in the USB OVP… ....

Si Mosfets , Denis Marcon , Innoscience Europe , Innoscience Technology , General Manager ,

Innoscience launches low voltage HEMT family in easy-to-use flip chip QFN packaging – CIE

Innoscience launches low voltage HEMT family in easy-to-use flip chip QFN packaging – CIE
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Denis Marcon , Innoscience Europe , Innoscience Technology ,