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January 19, 2021
The path that leads to the next generation of high-power electronics is not long. But it needs to be wide. Very wide.
A Cornell collaboration has found a way to grow a single crystalline layer of alpha-aluminum gallium oxide that has the widest energy bandgap to date – a discovery that clears the way for new semiconductors that will handle higher voltages, higher power densities and higher frequencies than previously seen.
Provided
The image at left shows the energy bandgap of alpha-aluminum gallium oxide compared to similar materials, and the effect of replacing gallium atoms with aluminum. The image on the right is an overview of alpha-aluminum gallium oxide grown on a substrate of sapphire. ....

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